The Effects of Halogen Exposure on the Photoluminescence of Porous Silicon

Abstract

AbstractInteraction of I2 vapor with luminescent porous silicon (PS) results in a mixed hydrogen/iodine terminated surface. The photoluminescence (PL) of PS is completely quenched upon I2 exposure. Excess iodine can be removed by pumping on the PS for several hours, resulting in partial recovery of the original PL spectrum. Exposing the hydrogen/iodine terminated PS to air results in the accelerated growth of an oxide layer and increased PL. The adsorption of iodine is postulated to induce surface traps that are responsible for the luminescence quenching observed.