Effects of additive and impurity species on the oxide morphology of silicon nitride

Abstract

Si3N4 sintered with Lu2O3 was exposed to 1 atm of oxygen and steam environments at 1200–1400 °C. The effects of additive and impurity species on the morphological development of the oxide layer were examined. Oxide layers grown on as-received samples in oxygen generally contained bubbles and cracks and underwent spallation due to the presence of an initial impurity-laden oxide layer. Oxide layers grown on as-received samples in steam exhibited layered morphology: a glassy outer layer and a cristobalite inner layer with a high population density of Lu2Si2O7 particles between. The Lu2Si2O7 particles accumulated at the interface led to extensive spallation of the upper oxide layer. Removal of the initial oxide by polishing resulted in improved oxidation resistance and oxide morphology in oxygen and in steam.