Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells-Reference-Cited by-同舟云学术

Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

Published:1997 Issue: Volume:485 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Jagannathan B.,Anderson W. A.

Abstract

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. 9. Jagannathan B. , Wallace R. L , and Anderson W. A. , J. Vac. Sci. Tech. (In press)

2. 7. Jagannathan B. , Wallace R. L. , Anderson W. A. , and Ahrenkiel R. N. , 26th IEEE PVSC, Anaheim (Sept. 1997)

3. 3. Keppner H. , Torres P. , Meier J. , Platz R. , Fisher D. , Kroll U. , Dubail S. , Selvan J. A. Anna , Vaucher N. P. , Zeigler Y. , Tscharner R. , Hof Ch. , Beck N. , Goetz M. , Pernet P. , Goerlitzer M. , Wyrsch N. , Veuille J. , Cuperus J. , Shah A. , and Pohl J. , Mater. Res. Soc. Conf., Boston (Dec. 1996)

4. 4. Guha S. , , Proc. 25th IEEE Photovoltaic Conf. Proc., p.1017 (1996)

5. Fabrication of more stable materials and devices in amorphous silicon