Synthesis of Boron Nitride Film by Ion Beam Deposition

Abstract

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.