Formation and Transformation of Amorphous Silicide Alloys

Abstract

ABSTRACTAmorphous silicide films can be formed by rapid quenching using techniques of vapor deposition and ion beam mixing and also by slow heating using solid state interdiffusion and reaction. For example, amorphous TaSi2 films can be formed by sputtering or dual electron guns co-deposition. Amorphous Pt2Si3 films have been produced by mixing PtSi and Si at room temperature with an ion beam at about 100 to 300keV. Recently, an amorphous Rh-Si alloy phase has been made by slowly heating to 300°C a very thin crystalline Rh films (∼50Å) on amorphous Si. The formation and crystallization behavior of these amorphous silicide alloys has been studied by transmission electron microscopy and electrical conductivity measurement.