Abstract
ABSTRACTResults from numerical calculations with a recombination model involving one class of correlated dangling-bond states and exponential band tails, in a-Si:H, are reported. Fermi level, light intensity and temperature dependences of the μτ products are studied. The results are consistent with experimental data. It is found that photo-enhancement of (μτ)e, or superlinear photoconductivity, as well as thermal quenching, are associated with a capture cross section of the band tails smaller than the capture cross sections of the dangling-bond states.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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