Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

Abstract

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.