RTP Based Tin Barrier Integrity for WF6 Processing During W-Plug Formation

Author:

Lee C. Y.,Yen H.,Hsia S. T.,Liu D.,Shah N.,Feldmeier K.,Wasserman Y.

Abstract

AbstractThe study evaluates the barrier integrity of Rapid Thermal Processed (RTP) titanium layer to form TiSi2/TiN and sputter deposited TiN layer annealed in RTP system. Various temperatures and ambient conditions were used during processing. Subsequent effects of the W-plug process on the TiN layer have been evaluated in terms of effects of WF6 on the underlying Ti/TiN layer.Evaluation of the WF6 on the via side walls and the via corners will be the primary focus of this work. Results will be discussed in terms of effective TiN thickness the process of formation of TiN and its stability

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference4 articles.

1. 3. Wendt H. , Wilier J. , Guo H.S. and Gilboa H. , VMIC, June 1992

2. 1. van Gogh J. , Feldmeier K. , Takayama T. , Katsuki J. and Kobayashi K. , VMIC, June 1992

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1. Co and CoTi x for contact plug and barrier layer in integrated circuits;Microelectronic Engineering;2018-04

2. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. “Volcano” Reactions in Oxide Vias Between Tungsten CVD and Bias Sputtered TiN/Ti Films;Journal of The Electrochemical Society;2000

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