Characterization of TiN Films Prepared by Ion Beam Assisted Deposition-Reference-Cited by-同舟云学术

Characterization of TiN Films Prepared by Ion Beam Assisted Deposition

Published:1988 Issue: Volume:128 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Chang Albert L.,Kant R. A.

Abstract

ABSTRACTOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. 8. Middleton R. and Chang A. L. , U. S. Army Materials Technology Laboratory Technical Report. (to be published)

2. 6. Dauplaise H. M. and Chang A. L. , U. S. Army Materials Technology Laboratory Technical Report (to be published)

3. The preparation of cross-section specimens for transmission electron microscopy

4. The Relationship of Structure to Properties in Electrodeposited Films

5. 3. Hubler G. K. , Van Vechten D. , Donovan E. P. and Kant R. A. , presented at ASM Conference on Ion Implantation and Plasma Assisted Processes for Industrial Applications, May 22–25, 1988, Atlanta, GA

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