Abstract
ABSTRACTA complete theory of wafer heating during rapid thermal processing (RTP) is presented. Excellent agreement with experimental results of two commercial RTP systems is obtained. The temperature uniformity is limited by radiation loss at the wafer edge in the stationary state and by nonuniform illumination of the wafer during ramp-up. Structures on wafers are also potential sources for nonuniform heating. Considerable dynamic temperature inhomogeneities during rap-up might limitfu ture applications of RTPe specially when wafer sizes become larger. Possible improvements are suggested regarding adequate process cycling, chip and equipment design.
Publisher
Springer Science and Business Media LLC
Cited by
16 articles.
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