Nanoline Formation by Using Small-Aggregate Resist and Supercritical Resist Drying

Abstract

AbstractNanolines as small as 7 nm wide have been formed using a small-aggregate resist and supercritical resist drying. Aggregates consisting of resist polymers cause pattern roughness and cause nanolines to break. Hydrogen silsesquioxane (HSQ) is a resist material in which the aggregates are small due to its three-dimensional network. Development with an aqueous solution of TMAH provides high-contrast patterns. The problem that nanolines formed in HSQ collapse after development is solved by a supercritical resist drying technique. Supercritical drying suppresses the swelling of the resist by the rinse solution during development and thereby prevents nanolines from collapsing. The use of both small-aggregate HSQ resist and supercritical resist drying enables free-standing nanolines with a high aspect ratio to be formed without collapse.