Microstructural characterization of Al98.5wt. %Si1.0wt. %Cu0.5wt. % on chemical-vapor-deposited W
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Published:1993-05
Issue:5
Volume:8
Page:1001-1009
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ISSN:0884-2914
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Container-title:Journal of Materials Research
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language:en
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Short-container-title:J. Mater. Res.
Author:
Pico Carey A.,Bonifield Tom D.
Abstract
The microstructural and morphological properties of thin (6000 Å) Al98.5wt. %Si1.0wt. %Cu0.5wt. % films on chemical-vapor-deposited tungsten-coated substrates have been characterized as functions of substrate temperature during deposition and a postdeposition sinter. Scanning electron and transmission electron microscopic investigations show these properties can be categorized with respect to the substrate temperature during deposition. The Al98.5wt. %Si1.0wt. %Cu0.5wt. % films deposited on substrates heated at temperatures ≤200 °C are rough and are comprised of rounded grains. For deposition on substrates heated at ≤300 °C, the films are smooth. Large voids and small precipitates (presumably Al2Cu) are present in the films deposited at 400 °C. The films retain their as-deposited texture during a 450 °C sinter. Precipitates and evidence of W interactions occur in the sintered films deposited on the lower temperature substrates. In addition, the shapes of thermal hillocks and mesa-like protrusions that form during the sintering process are influenced by the films' as-deposited morphologies.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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