Author:
Cerullo M.,Phillips Julia M.,Anzlowar M.,Pfeiffer L.,Batstone J. L.,Galiano M.
Abstract
ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.
Publisher
Springer Science and Business Media LLC
Reference19 articles.
1. Surface morphology of epitaxial CaF2films on Si substrates
2. [8] “Thin Films — Interfaces and Phenomena”, Mat. Res. Soc. Proc., vol.54, 1986, edited by Nemanoch R. J. , Ho P. S. , Lau S. S. .
3. [7] “Silicon Molecular Beam Epitaxy”, CRC (in press).
4. Epitaxial growth and characterization of CaF2on Si
5. Post‐Growth Annealing Treatments of Epitaxial CaF2 on Si(100)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献