Atmospheric Pressure OMCVD Growth of GaAs Using Triethylarsenic and Alkylgallium Organometallic Precursors

Abstract

ABSTRACTTriethylarsenic was successfully used as a substitute for arsine in the atmospheric pressure OMCVD growth of GaAs epilayers. N-type GaAs films were produced at V/III ratios of 14–45 and growth temperatures of 560–590°C. The highest quality epilayers obtained were grown at temperatures of 560–570°C and V/Ill ratios of 23–27, with the best films exhibiting net carrier concentrations and 77K mobilities of ∼1015 cm−3 and ∼14,000cm2/V-s, respectively. All of the films grown using Et3As were found to be contaminated with carbon, which appears to result from an inherent decomposition mechanism of the Et3As reagent.