Investigation and characterization of the annealing effects on the ferroelectric behavior of PLD BaTiO3
Author:
Funder
National Science Foundation
Air Force Research Laboratory
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43579-021-00030-2.pdf
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4. S. Tanakamaru, T. Hatanaka, R. Yajima, K. Miyaji, M. Takahashi, S. Sakai, K. Takeuchi, A 0.5-V six-transistor static random access memory with ferroelectric-gate field effect transistors. Japanese J. Appl. Phys. 49, 121501 (2010)
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