Author:
Fischer H.,Schulte J.,Giehl J.,Böhm M.,Schmitt J. P. M.
Abstract
ABSTRACTTwo different pixel detectors have been fabricated, each of them consisting of an a-Si:H based photodiode layer on top of a crystalline silicon integrated circuit. Both sensors are arranged in a matrix and addressed columnwise, providing parallel readout of the matrix rows or optional random access. One sensor is an a-Si:H detector / x-Si switching transistor combination with 256 × 256 pixels and a pixel size of 100μm × 100μm. The signal transport in the array is examined, demonstrating its capability of very fast information readout. The second sensor, which consists of an array of 32 × 32 pixels on a 5μm PMOS ASIC, performs digital contour extraction. Experimental data on the performance of the intelligent array are also reported.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Micro-Imaging Systems;Reference Module in Materials Science and Materials Engineering;2017
2. Micro-Imaging Systems;Comprehensive Microsystems;2008
3. Thin film photodetectors for bioanalytical platforms;Analytical and Bioanalytical Chemistry;2005-12-03
4. Large Area Image Sensor Arrays;Technology and Applications of Amorphous Silicon;2000
5. Novel Device Concept for Voltage-Bias Controlled Color Detection in Amorphous Silicon Sensitized Cmos Cameras;MRS Proceedings;1999