Mobility Improvement Mechanism in a-Si:H TFTs With Smooth a-Si:H/SiNx Interface-Reference-Cited by-同舟云学术

Mobility Improvement Mechanism in a-Si:H TFTs With Smooth a-Si:H/SiNx Interface

Published:1992 Issue: Volume:258 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Takechi K.,Uchida H.,Kaneko S.

Abstract

ABSTRACTThe authors have investigated the mechanism for mobility improvement in a-Si:H TFTs with smooth a-Si:H/SiNx interface. SiNx surface roughness was evaluated by Atomic Force Microscope (AFM) measurement with nanometer resolution. The properties for a-Si:H initial growth layer near the a-Si:H/SiNx interface are affected by the SiNx surface roughness. By realizing a smooth SiNx surface, the properties for a-Si:H initial growth layer have been improved and high mobility TFT has been obtained. This high mobility TFT will have a great impact in application to high resolution liquid crystal displays.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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