Cathodoluminescence and Photoluminescence of Crystaline Silicon-Epilayer Grown on Si+-Implanted (1-102) Sapphire

Abstract

AbstractLuminescence on Si-epitaxial layers grown on Si-implated Al2O3 ( 1102) with 30 keV Si+ to a dose of 5×1015/cm2 has been investigated. To active the implanted Si+ ions in Al2O3, the post annealing was performed at 1100°C in Ar ambiant. Also, cathodoluminescence (CL) and photoluminescence (PL) have been used to study struc Al2O3tural and optical properties of nc-Si in the Si+-implanted (1102) Al2O3 substrates. In the PL and CL spectra for Si+-implanted samples, peaks to be responsible for nanocrystalline-Si (nc-Si) appear at 316 nm (3.92 eV) and 574 nm (2.16 eV), respectively. The crystallinity of nc-Si imbeded in Al2O3 has been about 5nm in size and the dislocation aligned parallel to the (0001) planes of (1102) Al2O3, confirmed by transmission electron microscopy (TEM).