Scanning Tunneling Microscopy for Hydrogen-Desorptioninduced Structural Change of Si(111) Surface

Abstract

AbstractA scanning tunneling microscopy (STM) has revealed an atomic structure of Si(111)-√3× √3R30° which is induced by the hydrogen desorption at about 500 °C. There exist domains with the √3× √3R30° structures, indicating that each domain is formed by rearrangement of Si adatoms around each cluster present at room temperature. Near the domain boundary, the adatoms locate mostly at T4 sites and occasionally at H3 sites. The dynamic nature of the adatoms are predicted.