Electrical Transport in thin Silicide Films

Abstract

ABSTRACTThis paper reviews our recent studies of electrical transport in thin suicide films. Resistivity as a function of temperature, Hall effect, and magnetoresistance have been characterized for CoSi2 and NiSi2 and in conjunction with band theory provide estimates of important electronic parameters, viz. carrier densities and carrier scattering lengths. Resistivity data for TiSi2 and TaSi2 are included. Also examined in resistivity are (i) effects produced by ion bombardment which show CoSi2 to have an unusual susceptibility to radiation damage and (ii) classical size effects in the very thin film regime which show the boundary scattering to be principally specular. As an application we describe a Si/CoSi2/Si heterostructure transistor recently developed.