Author:
Mauckner G.,Hamann J.,Rebitzer W.,Baier T.,Thonke K.,Sauer R.,Halbleiterphysik Abt.
Abstract
ABSTRACTThe photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.
Publisher
Springer Science and Business Media LLC
Reference20 articles.
1. Temperature‐dependent lifetime distribution of the photoluminescence S‐band in porous silicon
2. Surface Structures and Photoluminescence Mechanisms of Porous Si
3. Models and Mechanisms for the Luminescence of Porous Si
4. 18 Grivickas V. , Linnros J. and Tellefsen J.A. , E-MRS Conference, Symposium F (1994)
5. 17 Mauckner G. , Hamann J. , Rebitzer W. , Baier T. , Thonke K. and Sauer R. , (submitted to Applied Physics Letters)
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献