Author:
Grützmacher D.A.,Steigmeier E.F.,Auderset H.,Morf R.,Delley B.,Wessicken R.
Abstract
ABSTRACTLight emitting Si nanostructures were fabricated by recrystallizing Si/SiNx superlattices grown by plasma enhanced chemical vapor deposition. After recrystallisation by a laser annealing or by rapid thermal annealing the Raman spectra show clearly a confinement effect. A substantial photoluminescence around 470 to 550 nm and at 620 nm is observed after a hydrogen passivation step. The photoluminescence at 620 nm is assigned to carrier recombination via efficient surface states, whereas the blue emission at 470 to 550 nm shows a behaviour expected for quantum confinement effects.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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