Author:
Lu J.P.,Schuylenbergh K. Van,Fulks R. T.,Ho J.,Wang Y.,Lau R.,Nylen P.,Mei P.,Mulato M.,Boyce J.B.,Street R.A.
Abstract
AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. Simulated and measured data-line parasitic capacitance of amorphous silicon large-area image sensor arrays
2. Polycrystalline silicon thin film transistors
3. Laser Crystallized Polysilicon TFT'S Using LPCVD, PECVD and PVD Silicon Channel Materials-A Comparative Study
4. 6. Rahn J. T. , Lemmi F. , Lu J.P. , Mei P. , Street R. A. , Ready S.E. , Ho J. , Apte R. , Schuylenbergh K. van , Lau R. , Weisfield R. , Lujan R. , and Boyce J. B. , SPIE Proc. of Medical Applications of Penetrating Radiation (1999).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献