Author:
Song S. C.,Lee C. H.,Luan H. F.,Kwong D. L.,Gardner M.,Fulford J.,Allen M.,Bloom J.,Evans R.
Abstract
ABSTRACTIn this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.
Publisher
Springer Science and Business Media LLC
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