New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

Abstract

ABSTRACTHighly conductive B-doped hydrogenated amorphous Si (a-Si:H) as well as amorphous SiC alloys (a-SiC:H) have been prepared from (SiH4) / (B2H6/SiH4) and (SiH4/CH4)/(B2H6/SiH4) plasmas, respectively by a novel surface-temperature-modulation method. Films produced by this technique exhibit a higher conductivity as compared to the conventionally prepared films, i.e., 7.0×l0−3scm−l for p-type a-Si:H with an optical gap of 1.7eV and 5.5×l0−5Scm−l for p-type a-SiC:H of optical gap 1.9eV.