Proximity Recovery Layers to Speed up the Recovery of Stressed Amorphous Silicon Thin-Film Transistors

Abstract

ABSTRACTWe have developed a means to speed up the recovery of both the threshold voltage shift of hydrogenated amorphous silicon (a-Si:H) transistors and the Vx shift of high voltage a-Si devices. This is accomplished by placing a lightly doped compensated layer adjacent to the active layer in these transistors. This proximity recovery layer does not alter the initial characteristics of a-Si:H transistors and is completely process compatible with standard fabrication procedures.