Author:
Koinuma H.,Nakano M.,Gonda S.
Abstract
ABSTRACTThe interface structure of a-Si:H films deposited by glow discharge decomposition of Si2H6 on SnO2 was characterized on an atomic scale with the use of in situ XPS. The method analyzes the variation of the intensity of photoelectron emission originating from the bottom SnO2 layer and transmitting through the upper a-Si:H layers of various thicknesses. It was evaluated that a-Si:H was partially oxidized as it grew to a thickness of about 15 A, while the SnO2 bottom layer was reduced to metallic Sn and SnOx (0 < x < 2) states as deep as 2 A and 12 A from the interface, respectively,
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. 6. Giannetti C. , Coluzza C. , Frova A. , Fanfoni M. , Capozi M. , Quaresima C. , and Perfetti P. , Proc. of 13th ICALS, 204 (1980).
2. A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides
3. Diffusion of Constituent Atoms in P-type a-Si:H/SnO2Interfaces
4. 5. Fukuda N. et. al., in Proc. of 3rd Conf. Photovoltaic Science and Engineering (Kyoto, 1982)
5. Jpn. J. Appl. Phys. 21 (Suppl. 21-2), 271 (1982).
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