Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density-Reference-Cited by-同舟云学术

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Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

Published:1995 Issue: Volume:378 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kissinger G.,Morgenstern T.,Morgenstern G.,Erzgräber H. B.,Richter H.

Abstract

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference17 articles.

1. Investigation of dislocations in Si1−xGex/Si heterostructures grown by LPCVD

2. 10. Kissinger G. , Morgenstern T. , Morgenstern G. , and Richter H. , German Patent Application DE-P 44 38 380.0 (27.10.1994).

3. An Etch for Delineation of Defects in Silicon

4. Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98heteroepitaxial layer

5. Relaxed, low threading defect density Si0.7Ge0.3epitaxial layers grown on Si by rapid thermal chemical vapor deposition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates;Thin Solid Films;1997-02

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