Nonstoichiometric Defects in Semiconductor SnTe Thin Films

Abstract

AbstractThe mono- and polycrystalline films of the SnTe1+x semiconducting phase with controlled content of nonstoichiometric defects (NSD) were grown by thermal evaporation and hot wall epitaxy methods from the charges of different composition. The concentration of NSD was determined using X-Ray diffraction method and the measurements of carrier density. The temperature dependences of electrical conductivity and Hall coefficient were obtained in the temperature range of 77 - 300 K. The best results were obtained for hot wall epitaxy method: the perfect monocrystalline films with NSD content corresponding to x =0-0,025 and high mobility of charge carriers were grown.