Author:
Ogita Y.,Nakano M.,Masumura H.
Abstract
ABSTRACTThe photoconductivity amplitude (PCA) technique with UV laser carrier excitation has been proposed to characterize surface property and subsurface damage. Combining this new technique with mechanochemical polishing has determined the depth profile of the slicing-induced residual damage. Combining SC1 cleaning with this technique allows to determine the depth profile of residual damage induced by mirror polishing. This result leads that the mirror polishing-induced damage can be removed by the SC1 cleaning.
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. Non-contact observations of photoconductivity decay and carrier lifetime measurements in epitaxial silicon wafers
2. 6. Ogita Y. , Shinbu K. , Katoh T. , Ishihara M. and Hirai T. , The Japan Soc. of Appl. Phys. and Related Soc, Extended Abs., (1994 Spring), No.2, P.685 (29a-ZK-2)
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献