Internal Gettering in Czochralski Silicon

Abstract

ABSTRACTA review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies. Two different paths for oxygen precipitation are considered, the first path being 450C thermal donor - coesite defects and the second being <100> oriented platelets. A summary of the uses of oxygen precipitation gettering in integrated circuit fabrication and a simple model for optimization of internal gettering follows the precipitation discussion.