Author:
Zheng L. R.,Hung L. S.,Mayer J. W.
Abstract
AbstractThe redistribution of arsenic during CrSi2 formation and its influence on the growth rate of the silicide have been investigated with Rutherford backscattering and ion channeling spectroscopy and electron microscopy. Arsenic was introduced by implantation in the metal films or in the silicon substrates. When arsenic was initially in chromium, it was incorporated in CrSi2 during silicide formation and significantly reduced the reaction rate; when arsenic was initially in silicon, it accumulated at the silicon/silicide interface with a less pronounced retarding effect than that if arsenic was present in chromium. The redistribution of dopant atoms is attributed to the fact that silicon is the dominant moving species in CrSi2 formation. The influence of dopant atoms is related to their chemical and physical state.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. 3. Zheng L. R. , S.Rung L. , Mayer J. W. and Choi K. W. , Nucl. Instr. and Meth. (in press).
2. 6. Zheng L. R. , Hung L. S. , and Mayer J. W. (unpublished).
3. Low‐temperature redistribution of As in Si during Pd2Si formation
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