In Situ Investigation of the Palladium Silicon Reaction-Reference-Cited by-同舟云学术

In Situ Investigation of the Palladium Silicon Reaction

Published:1984 Issue: Volume:37 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Smith D. A.,Psaras P. A.,Fishert I. J.,Tu K. N.

Abstract

AbstractPalladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

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3. Structure and growth kinetics of Ni2Si on silicon

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5. Transmission electron microscopy of the formation of nickel silicides

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1. Palladium and platinum;Coordination Chemistry Reviews;1990-05

2. Investigations of dynamical changes in metal/silicon and ion‐implanted silicon thin films by cross‐sectional transmission electron microscopy with intermittent annealings in N2ambient;Journal of Applied Physics;1987-08

3. Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient;MRS Proceedings;1987