Author:
Kaminska Eliana,Przezdziecka Ewa,Piotrowska Anna,Kossut Jacek,Dynowska Elzbieta,Dobrowolski Witold,Barcz Adam,Jakiela Rafal,Lusakowska Elzbieta,Ratajczak Jacek
Abstract
ABSTRACTThe fabrication and properties of ZnO-based rectifying p-n and p-i-n junctions are reported. ZnO films with p-type conductivity were obtained by oxidation of ZnTe grown by MBE on GaAs substrate. Insulating and n-type ZnO films were deposited by magnetron sputtering. The processing of p-n junctions into device structures involved the formation of mesa geometry and preparation of ohmic contacts to p- and n-type regions.
Publisher
Springer Science and Business Media LLC