Author:
Levit M.,Grimberg I.,Weiss B.-Z.,Eizenberg M.
Abstract
AbstractNi-Ti alloy is a promising candidate for high-temperature contact metallization for SiC electronic devices. In the present study Ni-Ti alloy thin films (100 nm) of two different compositions (Ni90Ti10 and Ni50Ti50) were coevaporated on 6H-SiC substrate. Interfacial reactions, microstructure, compositional changes, and phase formation were investigated as functions of heat-treatments in the range of 400–800 °C. The study was carried out using Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. In the case of the Ni90Ti10 alloy the interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of a Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third - of Ni2 Si. In the case of the Ni50 Ti50 alloy the interaction began at 800 °C. Carbon is the dominant diffusant. The reaction zone is divided into two layers. The first, next to the substrate layer is composed of epitaxially grown TiC and the second - of Ni3Ti2Si compound. A thin (∼5 nm) amorphous discontinuous layer was found at the TiC/SiC interface. Factors controlling phase formation in the Ni-Ti/SiC system are discussed.
Publisher
Springer Science and Business Media LLC
Reference12 articles.
1. 3. Crofton J. , Ferrero J. M. , Barnes P. A. , Williams J. R. , Bozack M. J. , Tin C. C. , Ellis C. D. , Spitznagel J. A. , and McMullin P. G. , in 4th. Int. Conf. Amorphous and Crystalline SiC, Santa Clara, CA, Oct. 10–11, 1991.
2. Interaction between Ni90Ti10 alloy thin film and Si single crystal
3. Chemical and Electrical Mechanisms in Titanium, Platinum, and Hafnium Contacts to Alpha (6H) Silicon Carbide
4. Thermally Activated Reactions of Titanium Thin Films with (100) 3C-SiC Substrates