Author:
Nishino Shigehiro,Okui Yoichi,Tai Yuehai,Jacob Chacko
Abstract
ABSTRACTSingle crystalline 3C-SiC films have been grown on Si(111) substrate at 1200°C by conventional CVD process using HMDS (Hexamethyldisilane). Before columnar growth of SiC, columnar Si was made by depositing Au on Si(111) substrate as a solvent of VLS mechanism. Si growth was carried out by disproportional reaction in halide transport method. The columnar Si was produced on the patterned substrates. The columnar Si was covered by SiC. Needle like columns of SiC can be used for MEMS application such as micro-heat exchanger.
Publisher
Springer Science and Business Media LLC