Abstract
ABSTRACTAdvances in epitaxial growth techniques such as molecular beam epitaxy and
metal organic chemical vapor deposition have facilitated the formation of
high quality III-V heterostructures with dimensional control down to atomic
levels, with abrupt doping and near-defect-free interfaces. The flexibility
and remarkable control offered by these techniques have resulted in the
fabrication of new devices based on confinement or modulation of carriers in
thin III-V heterostructures. Quantum wells and superlattice based devices
are expected to be utilized in optical information processing as sources,
modulators, and detectors. In this paper, we will review the general
epitaxial requirements for quantum wells and superlattices based devices,
and discuss the fabrication and properties of a new class of infrared
photodetectors that employ intraband transitions in quantum wells.
Publisher
Springer Science and Business Media LLC