Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors-Reference-Cited by-同舟云学术

Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors

Published:1991 Issue: Volume:228 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Chen Li,Hu Kezhong,Rajkumar K. C.,Guhae S.,Kapre R.,Madhukar A.

Abstract

ABSTRACTWe report the realization of high quality strained InGaAs/GaAs multiple quantum wells (MQW) grown on planar GaAs (100) substrates through optimization of molecular beam epitaxical (MBE) growth conditions and structure. Such MQWs containing ∼ 11% In have lead to the realization of an asymmetric Fabry-Perot (ASFP) reflection modulator with a room temperature contrast ratio of 66:1 and an on-state reflectivity of 30%. For In composition ≥ 0.2, the improved optical quality for very thick (gt;2μm) InGaAs/GaAs MQWs grown on pre-patterned substrates is demonstrated via transmission electron microscopy (TEM) and micro-absorption measurements.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference17 articles.

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