Possibility of a Si-Based Infrared Detector Using Microcrystalline B-Si-Ge Alloys

Abstract

ABSTRACTMicrocrystalline films of B-Si-Ge alloy have been deposited by the sputtering of Ge target in atmosphere of SiH4 and B2H6. Microcrystalline B-Si-Ge alloy/Si hetero-junction was fabricated on p-type Si(100) wafers with the resistivity of 1∼10 Ωcm. The barrier height of this Schottky structure was estimated to be in the range of 0.20∼0.30 eV which can be controlled by inclusion amounts of boron. The reverse biased Schottky characteristic using the microcrystalline B-Si-Ge alloy as to the gate shows the avalanche breakdown by illuminating of 6 μm light.