Electrical profiles of ultra-low energy antimony implants in silicon-Reference-Cited by-同舟云学术

Electrical profiles of ultra-low energy antimony implants in silicon

Published:2004 Issue: Volume:810 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Alzanki T.,Gwilliam R.,Emerson N.,Sealy B. J.,Collart E.

Abstract

ABSTRACTA novel Differential Hall Effect technique is used to obtain doping profiles of 2keV implants of antimony in <100> silicon at a depth resolution of 2nm. The electrical profiles are compared with atomic profiles determined from Secondary Ion Mass Spectroscopy (SIMS) measurements. We demonstrate good consistency between the two profiling techniques and confirm that the SIMS profiles can be used to identify the junction depth. The profiles show that antimony does not diffuse significantly for annealing temperatures below 800°C.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. 10. Alzanki T. , Gwilliam R. , Emerson N. , Tabatabaian Z. , Jeynes C. and Sealy B. J. , Semi. Sci. and Tech. (2004) (in press).

2. 11. Alzanki T. , Gwilliam R. , Emerson N. and Sealy B. J. , J. Elec. Mat. (2004) (in press).

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