Formation and thermal stability of 2D ordered SiC/Si(001) nanodots-Reference-Cited by-同舟云学术

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Formation and thermal stability of 2D ordered SiC/Si(001) nanodots

Published:2012-12-28 Issue:2 Volume:28 Page:261-267
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Petz Christopher W.,Yang Dongyue,Levy Jeremy,Floro Jerrold A.

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation

2. Epitaxy of Dissimilar Materials

3. Island motion triggered by the growth of strain-relaxed SiGe/Si(001) islands

4. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

5. Formation and thermal stability of sub-10-nm carbon templates on Si(100)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Dimensional Silicon-Carbide Structures: Analytical Estimates of Electron-Spectrum Characteristics;Semiconductors;2020-05

2. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001);Applied Physics Letters;2014-01-06

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