Author:
Hofinann D. M.,Kovalev D.,Steude G.,Volm D.,Meyer B. K.,Xavier C.,Monteiro T.,Pereira E.,Mokov E. N.,Amano H.,Akasaki I.
Abstract
ABSTRACTThe yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation methode on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.
Publisher
Springer Science and Business Media LLC
Cited by
11 articles.
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