Effect of Ni-Si Disordered Layer on the Electronic Properties of Ni Silicide Barrier Contacts on Silicon

Abstract

AbstractChanges in current transport and barrier heights of Ni-Si contacts as it undergoes atomic rearrangement and redistribution of charges under transient light annealing is studied with time resolution of 0.6 msec. Formation of an intermixed Ni-Si disordered layer by Ni-diffusion is shown by Auger data. Intrinsic barrier height of 0.7 eV increases to 0.82 eV as the spatial extent, disorder and density of Ni atoms which introduce new localized ststes at Ev+0.7 eV increases. Electronic properties of silicide contacts are affected by local interfacial bonds than by the characteristic of later grown silicide.