Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si-Reference-Cited by-同舟云学术

Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si

Published:1986 Issue: Volume:74 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Jacobson D. C.,Elliman R. G.,Gibson J. M.,Olson G. L.,Poate J. M.,Williams J. S.

Abstract

AbstractThe diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150–600° C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515°C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. Mechanism of Gold Diffusion into Silicon

2. Diffusion and precipitation in amorphous Si

3. [2] Poate J. M. , Jacobson D. C. , Williams J. S. , Elliman R. G. and Boerma D. O. , Nuclear Instruments & Method (in press).

4. Solubility and Diffusivity of Gold, Iron, and Copper in Silicon

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