Author:
Lcurrent M.,Foad M. A.,England J. G.,Lopes D.,Jones C.,Su D.
Abstract
ABSTRACTAtomic profiles (SIMS) and cross-section TEM images of selectively etched, annealed profiles were studied for Boron energies from 20 da eV (200 eV) to 10 keV and RTP anneals at 900, 975 and 1050 C Consistent variations of dopant depth was obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the poly mask.
Publisher
Springer Science and Business Media LLC