Quantitative Measurement of Dopant Concentration Profiling by Scanning Nonlinear Dielectric Microscopy

Abstract

AbstractUsing a scanning nonlinear dielectric microscopy (SNDM), we observed two standard Si samples with epitaxial staircase structures, which have known dopant density values calibrated by using secondary ion mass spectroscopy (SIMS). As the result, good quantitative correlation between dopant density values and SNDM signals was obtained without the phenomenon of contrast reversal effect, which is associated with conventional scanning capacitance microscopy (SCM) measurements. Thus, it is expected that SNDM will be an effective method for observing the quantitative measurement of two-dimensional dopant profiling on semiconductor devices.