Effect of Oxygen on Radiation-Enhanced Diffusion in Silicon

Abstract

ABSTRACTLow-energy ion bombardment has been used to enhance diffusion of phosphorus and antimony atoms in silicon. Oxygen free silicon crystals both containing phosphorus and antimony doped surface layers and original crystals were bombarded at 400–700°C with 400 eV oxygen or argon ions. Impurity and electrical carrier profiles were measured to analyse the role of oxygen in the radiationenhanced diffusion. The results obtained are explained on assuming complexes such as vacancyoxygen and vacancy-substitutional impurity to be involved in the process.