Author:
Tsujino J.,Tatsumi N.,Shiohara Y.
Abstract
As-grown YBa2Cu3Ox films prepared on single crystal (100)MgO substrates by rf thermal plasma evaporation have the advantages of a high deposition rate of 730 nm/min, a large area deposition over 300 cm2, and a high Jc of 6.8 × 105 A/cm2 (77 K, O T), as reported in previous papers.1,2 We report in this paper about the preparation of YBa2Cu3Ox films on yttria-stabilized zirconia (YSZ) polycrystalline substrates for a practical application using this technique to synthesize these films on flexible (metal or flexible polycrystal) substrates. Films prepared on YSZ polycrystalline substrates grew with a c-axis orientation at a relatively high deposition rate and exhibited a zero resistance temperature (TcO) of 88 K and a critical current density Jc of 3500 A/cm2 (77 K, O T). Films prepared on flexible YSZ polycrystalline tapes with a length of 100 mm were also grown with a c-axis orientation and exhibited TcO) over 77 K.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
14 articles.
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