Rapid Thermal Annealing of Tungsten Silicide Films

Abstract

AbstractTungsten / silicon multisandwich layers were deposited by DC magnetron sputtering on silicon and silicon oxide substrates. After the deposition the samples were annealed by rapid thermal annealing at different temperatures under H2 atmosphere. X-ray diffraction measurements were carried out to determine the crystal structure of the obtained silicide layers. To estimate the grain size and the relative lattice strain in dependence on the annealing temperature from the X-ray profile the deconvolution method of Lagrange was used. To characterize the electrical properties the specific resistance was measured by a linear four-point method. The best specific resistance measured was approximately 17 μΩcm for the sample on silicon substrate annealed at 1195 °C for 20 seconds. Rutherford Backscattering Spectroscopy measurements were carried out to obtain the stoichiometric depth profile.