Characterization of Zirconium Germanosilicide Formed by Solid State Reaction of ZR With Sil−xGex Alloys

Abstract

AbstractWe have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Sil−xGex solid state reaction. Thin films of C49 Zr(Si1−xGex)2 were formed from the solid phase reaction of Zr and Si1−xGex bilayer structures. It was observed that Zr reacts uniformly with the Sil−xGex alloy and that C49 Zr(Si1−x Gex)2 is the final phase of the Zr-Si1−xGex, solid phase reaction (such tht y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1−xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Sil−x Gex)2 in contact with Si1−Gex was investigated and no germanium segregation was detected in the Zr(Si1−xGex)2/Si1−Gex structures.